Invention Grant
US08685268B1 Method of forming textured silicon substrate by maskless cryognic etching
失效
通过无掩模低温蚀刻形成纹理硅衬底的方法
- Patent Title: Method of forming textured silicon substrate by maskless cryognic etching
- Patent Title (中): 通过无掩模低温蚀刻形成纹理硅衬底的方法
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Application No.: US13895499Application Date: 2013-05-16
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Publication No.: US08685268B1Publication Date: 2014-04-01
- Inventor: Karl Y. Yee , Andrew P. Homyk
- Applicant: United States of America as Represented by the Administrator of NASA
- Applicant Address: US DC Washington
- Assignee: The United States of America as Represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee: The United States of America as Represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Agent Mark Homer
- Main IPC: C23F3/00
- IPC: C23F3/00
Abstract:
Disclosed herein is a textured substrate comprising a base comprising silicon, the base having a plurality of needle like structures depending away from the base, wherein at least one of the needle like structures has a depth of greater than or equal to about 50 micrometers determined perpendicular to the base, and wherein at least one of the needle like structures has a width of less than or equal to about 50 micrometers determined parallel to the base. An anode and a lithium ion battery comprising the textured substrate, and a method of producing the textured substrate are also disclosed.
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