Invention Grant
US08685549B2 Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same
有权
用于超高密度信息存储的纳米复合材料,包括其的器件及其制造方法
- Patent Title: Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same
- Patent Title (中): 用于超高密度信息存储的纳米复合材料,包括其的器件及其制造方法
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Application No.: US12956598Application Date: 2010-11-30
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Publication No.: US08685549B2Publication Date: 2014-04-01
- Inventor: Amit Goyal , Junsoo Shin
- Applicant: Amit Goyal , Junsoo Shin
- Applicant Address: US TN Oak Ridge
- Assignee: UT-Battelle, LLC
- Current Assignee: UT-Battelle, LLC
- Current Assignee Address: US TN Oak Ridge
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Main IPC: C30B23/02
- IPC: C30B23/02 ; B32B9/00 ; G11B5/127 ; G11B5/706

Abstract:
A nanocomposite article that includes a single-crystal or single-crystal-like substrate and heteroepitaxial, phase-separated layer supported by a surface of the substrate and a method of making the same are described. The heteroepitaxial layer can include a continuous, non-magnetic, crystalline, matrix phase, and an ordered, magnetic magnetic phase disposed within the matrix phase. The ordered magnetic phase can include a plurality of self-assembled crystalline nanostructures of a magnetic material. The phase-separated layer and the single crystal substrate can be separated by a buffer layer. An electronic storage device that includes a read-write head and a nanocomposite article with a data storage density of 0.75 Tb/in2 is also described.
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