Invention Grant
- Patent Title: Method for fabricating magnetic tunnel junction
- Patent Title (中): 磁隧道结的制造方法
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Application No.: US13331546Application Date: 2011-12-20
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Publication No.: US08685757B2Publication Date: 2014-04-01
- Inventor: Dong Ha Jung , Gyu An Jin , Su Ryun Min
- Applicant: Dong Ha Jung , Gyu An Jin , Su Ryun Min
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0006706 20110124
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating a magnetic tunnel junction element includes forming a magneto resistance layer including a first magnetic layer, an insulation layer and a second magnetic layer on a substrate, forming a magnetic loss area by doping a magnetic loss impurity into a region of the magneto resistance layer to cause a magnetic loss, and etching the magnetic loss area to form a magnetic tunnel junction element.
Public/Granted literature
- US20120187510A1 METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION Public/Granted day:2012-07-26
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