Invention Grant
- Patent Title: Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof
- Patent Title (中): 具有垂直结构的纳米线隧道场效应晶体管及其制造方法
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Application No.: US13528398Application Date: 2012-06-20
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Publication No.: US08685788B2Publication Date: 2014-04-01
- Inventor: Weining Bao , Chengwei Cao , Pengfei Wang , Wei Zhang
- Applicant: Weining Bao , Chengwei Cao , Pengfei Wang , Wei Zhang
- Applicant Address: CN Shanghai
- Assignee: Fudan University
- Current Assignee: Fudan University
- Current Assignee Address: CN Shanghai
- Agency: Merchant & Gould P.C.
- Priority: CN201110309367 20111013
- Main IPC: H01L21/16
- IPC: H01L21/16
Abstract:
The present invention belongs to the technical field of semiconductor devices and specifically relates to a method for manufacturing a nanowire tunneling field effect transistor (TFET). In the method, the ZnO nanowire required is developed in a water bath without the need for high temperatures and high pressure, featuring a simple solution preparation, convenient development and low cost, as well as constituting MOS devices of vertical structure with nanowire directly, thus omitting the nanowire treatment in the subsequent stage. The present invention has the advantages of simple structure, convenient manufacturing, and low cost, and control of the nanowire channel developed and the MOSFET array with vertical structure made of it though the gate, so as to facilitate the manufacturing of large-scale MOSFET array directly.
Public/Granted literature
- US20130092902A1 NANOWIRE TUNNELING FIELD EFFECT TRANSISTOR WITH VERTICAL STRUCTURE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2013-04-18
Information query
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