Invention Grant
- Patent Title: Flank wettable semiconductor device
- Patent Title (中): 侧面润湿半导体器件
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Application No.: US13462827Application Date: 2012-05-03
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Publication No.: US08685795B2Publication Date: 2014-04-01
- Inventor: Jinquan Wang
- Applicant: Jinquan Wang
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Priority: CN201110162405 20110518
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A flank wettable semiconductor device is assembled from a lead frame or substrate panel by at least partially undercutting the lead frame or substrate panel with a first cutting tool to expose a flank of the lead frame and applying a coating of tin or tin alloy to the exposed flank prior to singulating the lead frame or substrate panel into individual semiconductor devices. The method includes electrically interconnecting lead frame flanks associated with adjacent semiconductor devices before applying the coating of tin or tin alloy. The lead frame flanks may be electrically interconnected during wire bonding.
Public/Granted literature
- US20120292755A1 FLANK WETTABLE SEMICONDUCTOR DEVICE Public/Granted day:2012-11-22
Information query
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