Invention Grant
- Patent Title: Methods for forming through vias
- Patent Title (中): 通孔形成方法
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Application No.: US13918767Application Date: 2013-06-14
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Publication No.: US08685798B2Publication Date: 2014-04-01
- Inventor: Tung-Liang Shao , Chih-Hang Tung , Chen-Hua Yu , Hao-Yi Tsai , Mirng-Ji Lii , Da-Yuan Shih
- Applicant: Taiwan Semiconductor Manufacting Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
Methods for forming through vias in an integrated circuit package are disclosed. A substrate having a first surface is covered with an encapsulation layer of uncured material; the method includes inserting an upper mold tool having a first plurality of pillars into the encapsulation layer to imprint through vias extending to the first surface of the substrate; curing the encapsulation layer and the through vias; removing the upper mold tool from the encapsulation layer; and disposing conductor material within the through vias to make electrical connectors within the through vias. In additional methods, a method for forming an encapsulation layer using an upper and lower mold tool to form through vias and a mold cavity is disclosed.
Public/Granted literature
- US20130273698A1 Methods for Forming Through Vias Public/Granted day:2013-10-17
Information query
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