Invention Grant
US08685807B2 Method of forming metal gates and metal contacts in a common fill process 有权
在普通填充过程中形成金属栅极和金属触点的方法

Method of forming metal gates and metal contacts in a common fill process
Abstract:
The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.
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