Invention Grant
US08685807B2 Method of forming metal gates and metal contacts in a common fill process
有权
在普通填充过程中形成金属栅极和金属触点的方法
- Patent Title: Method of forming metal gates and metal contacts in a common fill process
- Patent Title (中): 在普通填充过程中形成金属栅极和金属触点的方法
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Application No.: US13100798Application Date: 2011-05-04
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Publication No.: US08685807B2Publication Date: 2014-04-01
- Inventor: Ronny Pfuetzner , Ralf Richter , Jens Heinrich
- Applicant: Ronny Pfuetzner , Ralf Richter , Jens Heinrich
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.
Public/Granted literature
- US20120282765A1 Method of Forming Metal Gates and Metal Contacts in a Common Fill Process Public/Granted day:2012-11-08
Information query
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