Invention Grant
- Patent Title: Hafnium tantalum titanium oxide films
- Patent Title (中): 铪钽氧化钛薄膜
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Application No.: US13849970Application Date: 2013-03-25
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Publication No.: US08685815B2Publication Date: 2014-04-01
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8238 ; H01L21/8242 ; H01L21/336 ; H01L21/469 ; H01L27/108 ; H01L29/94 ; H01L29/788
Abstract:
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in a transistor. An embodiment may include forming a hafnium tantalum titanium oxide film using a monolayer or partial monolayer sequencing process such as reaction sequence atomic layer deposition.
Public/Granted literature
- US20130224916A1 HAFNIUM TANTALUM TITANIUM OXIDE FILMS Public/Granted day:2013-08-29
Information query
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