Invention Grant
US08685819B2 Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines
失效
用于实现交叉导电或半导电接入线的交叉开关阵列的方法
- Patent Title: Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines
- Patent Title (中): 用于实现交叉导电或半导电接入线的交叉开关阵列的方法
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Application No.: US13154726Application Date: 2011-06-07
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Publication No.: US08685819B2Publication Date: 2014-04-01
- Inventor: Julien Buckley , Karim Aissou , Thierry Baron , Gabriel Molas
- Applicant: Julien Buckley , Karim Aissou , Thierry Baron , Gabriel Molas
- Applicant Address: FR Paris FR Paris FR Grenoble
- Assignee: Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique,Universite Joseph Fourier
- Current Assignee: Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique,Universite Joseph Fourier
- Current Assignee Address: FR Paris FR Paris FR Grenoble
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: FR1054547 20100609
- Main IPC: H01L21/8234
- IPC: H01L21/8234

Abstract:
A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.
Public/Granted literature
- US20120052598A1 METHOD FOR THE REALIZATION OF A CROSSBAR ARRAY OF CROSSED CONDUCTIVE OR SEMI-CONDUCTIVE ACCESS LINES Public/Granted day:2012-03-01
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