Invention Grant
- Patent Title: Transfer method, method for manufacturing semiconductor device, and semiconductor device
- Patent Title (中): 转移方法，制造半导体器件的方法和半导体器件
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Application No.: US13575158Application Date: 2011-01-17
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Publication No.: US08685837B2Publication Date: 2014-04-01
- Inventor: Masahiro Mitani
- Applicant: Masahiro Mitani
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2010-023225 20100204
- International Application: PCT/JP2011/050659 WO 20110117
- International Announcement: WO2011/096265 WO 20110811
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
After depressed portions (4) have been formed in advance in that surface of a Si substrate (1) on which Si single films (8) are to be formed, that surface of the Si substrate (1) on which the Si single films are to be formed and an intermediate substrate (5) are bonded together, and elements are separated from each other by grinding the Si substrate (1) from the bottom wall side of the depressed portions (4).
Public/Granted literature
- US20120299147A1 TRANSFER METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Public/Granted day:2012-11-29
Information query
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