Invention Grant
- Patent Title: Semiconductor device with buffer layer
- Patent Title (中): 具有缓冲层的半导体器件
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Application No.: US13626762Application Date: 2012-09-25
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Publication No.: US08685849B2Publication Date: 2014-04-01
- Inventor: Andrea Irace , Giovanni Breglio , Paolo Spirito , Andrea Bricconi , Diego Raffo , Luigi Merlin
- Applicant: Siliconix Technology C.V.IR
- Applicant Address: SG Singapore
- Assignee: Siliconix Technology C. V. IR
- Current Assignee: Siliconix Technology C. V. IR
- Current Assignee Address: SG Singapore
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/44
Abstract:
A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.
Public/Granted literature
- US20130115765A1 SEMICONDUCTOR DEVICE WITH BUFFER LAYER Public/Granted day:2013-05-09
Information query
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