Invention Grant
US08685854B2 Method of forming a via in a semiconductor device 有权
在半导体器件中形成通孔的方法

Method of forming a via in a semiconductor device
Abstract:
A process for burying a tungsten member into a blind hole formed in a wafer, in which blind hole a through via is to be made. Film-formation (for forming the tungsten member) is carried out to position, at the periphery of the wafer, the outer circumference of the tungsten member inside the outer circumference of a barrier metal beneath the tungsten film. This process makes it possible to bury the tungsten member, which may be relatively thin, into the blind hole, which may be relatively large, so as to decrease a warp of the wafer and further prevent an underlying layer beneath the tungsten member from being peeled at the periphery of the wafer.
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