Invention Grant
- Patent Title: Method of forming a via in a semiconductor device
- Patent Title (中): 在半导体器件中形成通孔的方法
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Application No.: US13046331Application Date: 2011-03-11
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Publication No.: US08685854B2Publication Date: 2014-04-01
- Inventor: Kazuhito Ichinose , Kotaro Kihara , Tatsunori Murata
- Applicant: Kazuhito Ichinose , Kotaro Kihara , Tatsunori Murata
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Womble Carlyle
- Priority: JP2010-055698 20100312
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A process for burying a tungsten member into a blind hole formed in a wafer, in which blind hole a through via is to be made. Film-formation (for forming the tungsten member) is carried out to position, at the periphery of the wafer, the outer circumference of the tungsten member inside the outer circumference of a barrier metal beneath the tungsten film. This process makes it possible to bury the tungsten member, which may be relatively thin, into the blind hole, which may be relatively large, so as to decrease a warp of the wafer and further prevent an underlying layer beneath the tungsten member from being peeled at the periphery of the wafer.
Public/Granted literature
- US20110221063A1 Manufacturing Method of Semiconductor Device Public/Granted day:2011-09-15
Information query
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