A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.