Invention Grant
- Patent Title: Method of manufacturing semiconductor device and substrate processing apparatus
- Patent Title (中): 制造半导体器件和衬底处理设备的方法
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Application No.: US12822317Application Date: 2010-06-24
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Publication No.: US08685866B2Publication Date: 2014-04-01
- Inventor: Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
- Applicant: Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.,Renesas Electronics Corp.
- Current Assignee: Hitachi Kokusai Electric, Inc.,Renesas Electronics Corp.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2009-161171 20090707
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.
Public/Granted literature
- US20110008955A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2011-01-13
Information query
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