Invention Grant
- Patent Title: Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
- Patent Title (中): 激光照射方法和激光照射装置及半导体装置的制造方法
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Application No.: US11433670Application Date: 2006-05-15
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Publication No.: US08686315B2Publication Date: 2014-04-01
- Inventor: Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Atsuo Isobe
- Applicant: Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Atsuo Isobe
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2001-292410 20010925; JP2001-328371 20011025; JP2002-256189 20020830
- Main IPC: B23K26/073
- IPC: B23K26/073 ; H01L21/268
Abstract:
The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
Public/Granted literature
- US20060215722A1 Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device Public/Granted day:2006-09-28
Information query
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