Invention Grant
- Patent Title: Silicon carbide semiconductor device and method for manufacturing same
- Patent Title (中): 碳化硅半导体器件及其制造方法
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Application No.: US13653747Application Date: 2012-10-17
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Publication No.: US08686438B2Publication Date: 2014-04-01
- Inventor: Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JP2011-230447 20111020
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/336
Abstract:
When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination region (TM). The side wall (ST) has a plane orientation of one of {0-33-8} and {0-11-4}. The bottom surface (BT) has a plane orientation of {000-1}. On the side wall (ST) and the bottom surface (BT), an insulating film (8T) is formed. A first electrode (12) is formed on the first side of the silicon carbide substrate (SB) at the element region (CL). A second electrode (14) is formed on a second side of the silicon carbide substrate (SB).
Public/Granted literature
- US20130099251A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2013-04-25
Information query
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