Invention Grant
US08686448B2 Light emitting device, electronic apparatus, and manufacturing method of light emitting device 有权
发光元件,电子设备及发光元件的制造方法

  • Patent Title: Light emitting device, electronic apparatus, and manufacturing method of light emitting device
  • Patent Title (中): 发光元件,电子设备及发光元件的制造方法
  • Application No.: US13478929
    Application Date: 2012-05-23
  • Publication No.: US08686448B2
    Publication Date: 2014-04-01
  • Inventor: Koya Shiratori
  • Applicant: Koya Shiratori
  • Applicant Address: JP Tokyo
  • Assignee: Seiko Epson Corporation
  • Current Assignee: Seiko Epson Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff PLC
  • Priority: JP2011-119675 20110527; JP2011-123401 20110601
  • Main IPC: H01L29/20
  • IPC: H01L29/20
Light emitting device, electronic apparatus, and manufacturing method of light emitting device
Abstract:
D={(2πm+φL+φU)/4π}λ is satisfied when an optical path length between a reflecting layer and pixel electrode and a counter electrode is D, a phase shift in reflection in the reflecting layer and pixel electrode is φL, a phase shift in reflection in the counter electrode is φU, a peak wavelength of a standing wave generated between the reflecting layer and pixel electrode, and the counter electrode is λ, and an integer of 2 or less is m. Here, among red, green, and blue pixel reflecting layer and pixel electrode, at least one reflecting layer and pixel electrode may be made of a different metal material from that of the other reflecting layer and pixel electrodes.
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