Invention Grant
- Patent Title: Composite substrate for formation of light-emitting device, light-emitting diode device and manufacturing method thereof
- Patent Title (中): 用于形成发光器件的复合衬底,发光二极管器件及其制造方法
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Application No.: US13203853Application Date: 2010-03-02
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Publication No.: US08686455B2Publication Date: 2014-04-01
- Inventor: Yasuyuki Ichizono , Hideki Hirayama
- Applicant: Yasuyuki Ichizono , Hideki Hirayama
- Applicant Address: JP JP
- Assignee: Ube Industries, Ltd.,Riken
- Current Assignee: Ube Industries, Ltd.,Riken
- Current Assignee Address: JP JP
- Agency: DLA Piper LLP (US)
- Priority: JP2009-049833 20090303
- International Application: PCT/JP2010/053727 WO 20100302
- International Announcement: WO2010/101272 WO 20100910
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided. A composite substrate for the formation of a light-emitting device, comprising a light-converting material substrate for radiating at least a part of incident light as light different in the wavelength through the surface opposite the incident surface, and at least two or more Al-containing nitride layers formed on the light-converting material substrate, wherein the light-converting material substrate has a texture comprising two or more oxide phases continuously and three-dimensionally entangled with each other, including an Al2O3 phase and at least one fluorescence-emitting oxide phase, and the nitride layer has a first layer of an Al-containing nitride layer formed on the light-converting material substrate and a second layer of AlN having a dislocation density of 1×1012/cm2 or less and preferably having a surface roughness (RMS) of 10 nm or less.
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