Invention Grant
US08686468B2 Semiconductor power device having wide termination trench and self-aligned source regions for mask saving
有权
半导体功率器件具有宽的端接沟槽和自对准源极区域，用于掩模保护
- Patent Title: Semiconductor power device having wide termination trench and self-aligned source regions for mask saving
- Patent Title (中): 半导体功率器件具有宽的端接沟槽和自对准源极区域，用于掩模保护
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Application No.: US13670499Application Date: 2012-11-07
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Publication No.: US08686468B2Publication Date: 2014-04-01
- Inventor: Fu-Yuan Hsieh
- Applicant: Force Mos Technology Co., Ltd.
- Applicant Address: TW New Taipei
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/332 ; H01L21/336
Abstract:
A trench semiconductor power device with a termination area structure is disclosed. The termination area structure comprises a wide trench and a trenched field plate formed not only along trench sidewall but also on trench bottom of the wide trench by doing poly-silicon CMP so that the body ion implantation is blocked by the trenched field plate on the trench bottom to prevent the termination area underneath the wide trench from being implanted. Moreover, a contact mask is used to define both trenched contacts and source regions of the device for saving a source mask.
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