There is provided a semiconductor wafer including a base wafer, an insulating layer, and a Si crystal layer in the stated order. The semiconductor wafer further includes an inhibition layer that is provided on the Si crystal layer and has an opening penetrating therethrough to reach the Si crystal layer. The inhibition layer inhibiting crystal growth of a compound semiconductor. Furthermore, a seed crystal is provided within the opening, and a compound semiconductor has a lattice match or a pseudo lattice match with the seed crystal. There is also provided an electronic device includes a substrate, an insulating layer that is provided on the substrate, a Si crystal layer that is provided on the insulating layer, an inhibition layer that is provided on the Si crystal layer and has an opening penetrating therethrough to reach the Si crystal layer, where the inhibition layer inhibits crystal growth of a compound semiconductor, a seed crystal that is provided within the opening, a compound semiconductor that has a lattice match or a pseudo lattice match with the seed crystal, and a semiconductor device that is formed using the compound semiconductor.