Invention Grant
- Patent Title: Methods of forming and programming an electronically programmable resistor
- Patent Title (中): 电子可编程电阻器的形成和编程方法
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Application No.: US13295392Application Date: 2011-11-14
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Publication No.: US08686478B2Publication Date: 2014-04-01
- Inventor: Benjamin T. Voegeli , Kimball M. Watson
- Applicant: Benjamin T. Voegeli , Kimball M. Watson
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Methods of electrically programming a diffusion resistor by using trapped charge in a trapped charge region adjacent to the resistor to vary the resistance of the resistor, and the resistor, are disclosed. In one embodiment, a method includes forming a diffusion resistor in a substrate; forming a trapped charge region adjacent to the diffusion resistor; and adjusting a resistance of the diffusion resistor by controlling the trapped charge in the trapped charge region.
Public/Granted literature
- US20120058611A1 METHODS OF FORMING AND PROGRAMMING AN ELECTRONICALLY PROGRAMMABLE RESISTOR Public/Granted day:2012-03-08
Information query
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