Invention Grant
- Patent Title: Stacked pixel for high resolution CMOS image sensor
- Patent Title (中): 用于高分辨率CMOS图像传感器的堆叠像素
-
Application No.: US12782637Application Date: 2010-05-18
-
Publication No.: US08686479B2Publication Date: 2014-04-01
- Inventor: Jaroslav Hynecek
- Applicant: Jaroslav Hynecek
- Applicant Address: US DE Wilmington
- Assignee: Intellectual Ventures II LLC
- Current Assignee: Intellectual Ventures II LLC
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy, Ltd.
- Priority: KR2005-0068469 20050727
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storage region formed in a first region under a surface portion of a substrate and collecting photo-generated carriers; a second charge storage region formed adjacent to the surface portion of the substrate and separated from the standard photo-sensing and charge storage region; and a potential barrier formed between the first region and a second region underneath the first region and diverting the photo-generated carriers from the second region to the second charge storage region.
Public/Granted literature
- US20100224947A1 STACKED PIXEL FOR HIGH RESOLUTION CMOS IMAGE SENSOR Public/Granted day:2010-09-09
Information query
IPC分类:
