Invention Grant
- Patent Title: CMOS image sensor
- Patent Title (中): CMOS图像传感器
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Application No.: US12940410Application Date: 2010-11-05
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Publication No.: US08686482B2Publication Date: 2014-04-01
- Inventor: Yun-Ki Lee
- Applicant: Yun-Ki Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0106263 20091105
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.
Public/Granted literature
- US20110101430A1 CMOS IMAGE SENSOR Public/Granted day:2011-05-05
Information query
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