A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a first doped region and a second doped region. The first doped region comprises a first contact region. The first doped region and the first contact region have a first type conductivity. The second doped region comprises a second contact region. The second doped region and the second contact region have a second type conductivity opposite to the first type conductivity. The first doped region is adjacent to the second doped region.