Invention Grant
- Patent Title: Silicide formation and associated devices
- Patent Title (中): 硅化物形成和相关设备
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Application No.: US13919459Application Date: 2013-06-17
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Publication No.: US08686516B2Publication Date: 2014-04-01
- Inventor: Hung-Ming Chen , Chih-Hao Chang , Chih-Hao Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78

Abstract:
Improved silicide formation and associated devices are disclosed. An exemplary semiconductor device includes a semiconductor substrate, a fin structure disposed over the semiconductor substrate and having spaced source and drain regions extending outwardly from a channel region, and a gate structure disposed on a portion of the fin structure, the gate structure engaging the fin structure adjacent to the channel region. The device also includes a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region and a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region. Further, the device includes a source contact conductively coupled to the first silicide layer and a drain contact conductively coupled to the second silicide layer.
Public/Granted literature
- US20140001574A1 IMPROVED SILICIDE FORMATION AND ASSOCIATED DEVICES Public/Granted day:2014-01-02
Information query
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