Invention Grant
- Patent Title: Magnetoresistive device
- Patent Title (中): 磁阻器件
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Application No.: US13487423Application Date: 2012-06-04
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Publication No.: US08686523B2Publication Date: 2014-04-01
- Inventor: Hao Meng , Rachid Sbiaa
- Applicant: Hao Meng , Rachid Sbiaa
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Main IPC: H01L29/82
- IPC: H01L29/82

Abstract:
A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first second and free magnetic layer structures are arranged one over the other. The first second and free magnetic layer structures have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the free magnetic layer structure and either one of the first fixed magnetic layer structure or the second fixed magnetic layer structure. The respective magnetization orientations of the first and the second fixed magnetic layer structures are oriented anti-parallel to each other, and the first fixed magnetic layer structure is a static fixed magnetic layer structure having a switching field that is larger than a switching field of the free magnetic layer structure.
Public/Granted literature
- US20120306034A1 Magnetoresistive Device Public/Granted day:2012-12-06
Information query
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