Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11942506Application Date: 2007-11-19
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Publication No.: US08686526B2Publication Date: 2014-04-01
- Inventor: Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
- Applicant: Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Abel Law Group, LLP
- Priority: JP2006-313379 20061120
- Main IPC: H01L31/0203
- IPC: H01L31/0203 ; H01L31/18

Abstract:
The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layer 6 due to a blue-violet laser.
Public/Granted literature
- US20080135967A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-06-12
Information query
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