Invention Grant
- Patent Title: Stack die structure for stress reduction and facilitation of electromagnetic shielding
- Patent Title (中): 用于电磁屏蔽的减压和便利化的堆叠式结构
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Application No.: US13335250Application Date: 2011-12-22
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Publication No.: US08686547B1Publication Date: 2014-04-01
- Inventor: Huahung Kao , Thomas Ngo , Shiann-Ming Liou
- Applicant: Huahung Kao , Thomas Ngo , Shiann-Ming Liou
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/49

Abstract:
Embodiments of the present disclosure describe a packaged semiconductor device that reduces stress on a semiconductor device caused by thermal expansion of the insulating material used in the packaged semiconductor device. In one embodiment, an inactive semiconductor device is coupled to the top of active semiconductor device. Both the inactive and active devices are encapsulated by the insulating material. The configuration of the inactive device is selected based on its ability to absorb the expansion of the insulating material at operating temperature.
Information query
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