Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13608582Application Date: 2012-09-10
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Publication No.: US08686553B2Publication Date: 2014-04-01
- Inventor: Masaya Kadono , Shunpei Yamazaki , Yukio Yamauchi , Hidehito Kitakado
- Applicant: Masaya Kadono , Shunpei Yamazaki , Yukio Yamauchi , Hidehito Kitakado
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-084989 19990326
- Main IPC: H01L23/22
- IPC: H01L23/22 ; H01L23/24
Abstract:
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
Public/Granted literature
- US20130001582A1 Semiconductor Device and A Method of Manufacturing the Same Public/Granted day:2013-01-03
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