Invention Grant
- Patent Title: Capacitive touch sensing structure and sensing method thereof
- Patent Title (中): 电容式触摸感测结构及其感测方法
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Application No.: US12780668Application Date: 2010-05-14
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Publication No.: US08686956B2Publication Date: 2014-04-01
- Inventor: Hsuan-I Pan , Guo-Kiang Hung
- Applicant: Hsuan-I Pan , Guo-Kiang Hung
- Applicant Address: TW
- Assignee: MStar Semiconductor, Inc.
- Current Assignee: MStar Semiconductor, Inc.
- Current Assignee Address: TW
- Agency: Han IP Corporation
- Main IPC: G06F3/041
- IPC: G06F3/041

Abstract:
A capacitive touch sensing structure includes: a substrate; a plurality of first electrode groups arranged from a first position towards a second position in a first direction, wherein each of the first electrode groups includes a plurality of first electrodes extended from a third position towards a fourth position in a second direction; a plurality of first conducting wires each having a plurality of contacts respectively coupled to the first electrodes of each of the first electrode groups; a plurality of second electrode groups arranged from the first position towards the second position in the first direction, wherein each of the second electrode groups includes a plurality of second electrodes extended from the fourth position towards the third position in the second direction and respectively staggering with the first electrode groups; and a plurality of second conducting wires each having a plurality of contacts respectively coupled to the electrodes of each of the second electrode groups.
Public/Granted literature
- US20100289774A1 Capacitive Touch Sensing Structure and Sensing Method Thereof Public/Granted day:2010-11-18
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