Invention Grant
- Patent Title: Opto-electronic device
- Patent Title (中): 光电器件
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Application No.: US13572587Application Date: 2012-08-10
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Publication No.: US08687269B2Publication Date: 2014-04-01
- Inventor: Michael Robertson , Xin Chen , Paul Cannard
- Applicant: Michael Robertson , Xin Chen , Paul Cannard
- Applicant Address: GB Ipswitch
- Assignee: The Centre for Integrated Photonics Limited
- Current Assignee: The Centre for Integrated Photonics Limited
- Current Assignee Address: GB Ipswitch
- Agency: Slater & Matsil, LLP
- Priority: GB1002391.9 20100212
- Main IPC: H01S5/30
- IPC: H01S5/30

Abstract:
An optical amplifier has a low polarization dependent gain. The amplifier includes a gain medium including a plurality of adjoining semiconductor layers to provide optical gain wherein the adjoining semiconductor layers define one or more quantum wells for electrons and are operative to provide both direct and indirect electron-hole transitions in the gain medium. A first quantized electron energy level in the conduction band and a first quantized hole energy level in the valence band is located in a first layer. A further first quantized hole energy level in the valence band is located in an adjacent second layer.
Public/Granted literature
- US20130033743A1 Opto-Electronic Device Public/Granted day:2013-02-07
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