Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13515183Application Date: 2011-09-05
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Publication No.: US08687330B2Publication Date: 2014-04-01
- Inventor: Minoru Nishio , Takatoshi Oe
- Applicant: Minoru Nishio , Takatoshi Oe
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2010-216971 20100928
- International Application: PCT/JP2011/070101 WO 20110905
- International Announcement: WO2012/043146 WO 20120405
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
The invention provides a low cost semiconductor device with which it is possible to easily select IGBT soft shutdown characteristics appropriate to a system.The drive IC (100) is configured of an output stage circuit (1), a shutdown circuit (2), a logic circuit (3), and an alarm signal processing circuit (4), the shutdown circuit (2) is configured of a resistor circuit (5) and an n-MOSFET (8), and the resistor circuit (5) is formed by an n-MOSFET (9), a resistor (10), and a switching conductor (11). By switching the switching conductor (11) of the resistor circuit (5) among A, B, and C conditions, it is possible to easily select shutdown characteristics of an IGBT (61) appropriate to a system.
Public/Granted literature
- US20120268851A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-25
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