Invention Grant
- Patent Title: Magnetic memory element and magnetic random access memory
- Patent Title (中): 磁存储元件和磁性随机存取存储器
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Application No.: US13139607Application Date: 2009-12-24
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Publication No.: US08687414B2Publication Date: 2014-04-01
- Inventor: Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
- Applicant: Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-330507 20081225; JP2009-229644 20091001
- International Application: PCT/JP2009/071408 WO 20091224
- International Announcement: WO2010/074130 WO 20100701
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.
Public/Granted literature
- US20110267879A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2011-11-03
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