Invention Grant
US08688895B2 Memory system and data management method of flash translation layer thereof
有权
其闪存转换层的存储器系统和数据管理方法
- Patent Title: Memory system and data management method of flash translation layer thereof
- Patent Title (中): 其闪存转换层的存储器系统和数据管理方法
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Application No.: US12654393Application Date: 2009-12-18
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Publication No.: US08688895B2Publication Date: 2014-04-01
- Inventor: Chunsoo Ahn , HeeTak Shin , JaeSung Jung
- Applicant: Chunsoo Ahn , HeeTak Shin , JaeSung Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0016867 20090227
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
A data management method includes determining the size of input data, storing the input data in a log block if the size of the input data is determined to be a write unit, and storing the input data in a partial block if the size of the input data is determined to be smaller than the write unit. The log block is a temporary block storing data of same addresses and the partial block is a temporary block storing data regardless of their addresses. The memory system includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory. The memory controller is configured to temporarily store input data smaller than a write unit in a selected memory block even when the input data have different addresses.
Public/Granted literature
- US20100223420A1 Memory system and data management method of flash translation layer thereof Public/Granted day:2010-09-02
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