Invention Grant
US08691047B2 Large area plasma processing chamber with at-electrode RF matching
有权
大面积等离子体处理室,具有电极RF匹配
- Patent Title: Large area plasma processing chamber with at-electrode RF matching
- Patent Title (中): 大面积等离子体处理室,具有电极RF匹配
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Application No.: US12948164Application Date: 2010-11-17
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Publication No.: US08691047B2Publication Date: 2014-04-08
- Inventor: Carl A. Sorensen , John M. White , Jozef Kudela
- Applicant: Carl A. Sorensen , John M. White , Jozef Kudela
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/505
- IPC: C23C16/505 ; H01L21/3065

Abstract:
A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
Public/Granted literature
- US20110135844A1 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING Public/Granted day:2011-06-09
Information query
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