Invention Grant
US08691047B2 Large area plasma processing chamber with at-electrode RF matching 有权
大面积等离子体处理室,具有电极RF匹配

Large area plasma processing chamber with at-electrode RF matching
Abstract:
A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
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