Invention Grant
- Patent Title: Plasma stabilization method and plasma apparatus
- Patent Title (中): 等离子体稳定化方法和等离子体装置
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Application No.: US13492706Application Date: 2012-06-08
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Publication No.: US08691048B2Publication Date: 2014-04-08
- Inventor: Takumasa Nishida , Shu Nakajima
- Applicant: Takumasa Nishida , Shu Nakajima
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Priority: JP2002-129241 20020430
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23C16/00

Abstract:
A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed around the processing chamber, an RF induction coil disposed outside the dielectric member, and an air-core coil for generating a direct-current magnetic field supplied to the inner space. The surrounding member seals an opening on top of the processing chamber to create an inner space, and the RF induction coil is above the top surface of the surrounding member.
Public/Granted literature
- US20120247680A1 PLASMA STABILIZATION METHOD AND PLASMA APPARATUS Public/Granted day:2012-10-04
Information query
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