Invention Grant
- Patent Title: Sputter-enhanced evaporative deposition apparatus and method
- Patent Title (中): 溅射增强蒸发沉积装置及方法
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Application No.: US11825733Application Date: 2007-07-09
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Publication No.: US08691064B2Publication Date: 2014-04-08
- Inventor: Daniel B. Mitchell , Geoffrey G Harris
- Applicant: Daniel B. Mitchell , Geoffrey G Harris
- Applicant Address: CA Ottawa
- Assignee: Raytheon Canada Limited
- Current Assignee: Raytheon Canada Limited
- Current Assignee Address: CA Ottawa
- Agency: Lando & Anastasi, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.
Public/Granted literature
- US20090014316A1 Sputter-enhanced evaporative deposition apparatus and method Public/Granted day:2009-01-15
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