Invention Grant
- Patent Title: Local exposure method and local exposure apparatus
- Patent Title (中): 局部曝光方法和本地曝光装置
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Application No.: US13326603Application Date: 2011-12-15
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Publication No.: US08691481B2Publication Date: 2014-04-08
- Inventor: Fumihiko Ikeda , Hikaru Kubota , Koutarou Onoue
- Applicant: Fumihiko Ikeda , Hikaru Kubota , Koutarou Onoue
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2010-285641 20101222
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A local exposure method includes steps of: dividing a large block into a plurality of small blocks; setting irradiation illuminances different in a stepwise fashion; controlling light emission of light emitting elements based on the irradiation illuminances respectively set for the small blocks for a photosensitive film on a substrate moving with respect to light emitting elements; developing the photosensitive film having been subjected to exposure processing by irradiation by the light emitting elements; measuring a residual film thickness of the photosensitive film for each of the small blocks to obtain correlation data between the illuminance set for the small block and the residual film thickness; and obtaining a required illuminance of irradiation to each of the large blocks from a target residual film thickness of the photosensitive film set for each of the large blocks based on the correlation data.
Public/Granted literature
- US20120164585A1 LOCAL EXPOSURE METHOD AND LOCAL EXPOSURE APPARATUS Public/Granted day:2012-06-28
Information query
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