Invention Grant
US08691495B2 Photoresist pattern forming method, and microlens array forming method
失效
光刻胶图案形成方法和微透镜阵列形成方法
- Patent Title: Photoresist pattern forming method, and microlens array forming method
- Patent Title (中): 光刻胶图案形成方法和微透镜阵列形成方法
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Application No.: US13593929Application Date: 2012-08-24
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Publication No.: US08691495B2Publication Date: 2014-04-08
- Inventor: Kousei Uehira , Satoshi Hirayama
- Applicant: Kousei Uehira , Satoshi Hirayama
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-191077 20110901
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A photoresist pattern forming method, comprising a first step of forming on an underlayer a photoresist film which includes a convex portion and a concave portion having a thickness thinner than a thickness of the convex portion, and a second step of processing the photoresist film to form, in a portion which has been the convex portion, an opening having a width narrower than a width of the convex portion, wherein in the second step, the convex portion of the photoresist film is at least partially exposed, and the photoresist film is then developed, and exposure light is condensed by the convex portion in exposing the photoresist film.
Public/Granted literature
- US20130059239A1 PHOTORESIST PATTERN FORMING METHOD, AND MICROLENS ARRAY FORMING METHOD Public/Granted day:2013-03-07
Information query
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