Invention Grant
- Patent Title: Hermetically sealed MEMS device and method of fabrication
- Patent Title (中): 密封式MEMS器件及其制造方法
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Application No.: US13671734Application Date: 2012-11-08
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Publication No.: US08691607B2Publication Date: 2014-04-08
- Inventor: Virgil C. Ararao
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A microelectromechanical (MEMS) device is fabricated from a wafer having a plurality of die regions with grooves and MEMS components formed on a wafer surface at each die region. A first metal having a relatively high melting temperature is formed on sidewalls of each groove, and a cap is attached at each die region to provide a closed cavity which encloses the grooves and MEMS components. Bottoms of the grooves are opened by thinning the wafer thereby establishing through-hole vias extending through the wafer at each die region, for accessing the cavity for inserting or removing material. The vias are sealed by interacting a second metal having a relatively low melting temperature with the first metal layer to form intermetallic compounds with higher melting temperature that maintain the seal during subsequent lower temperature operations.
Public/Granted literature
- US20130330878A1 HERMETICALLY SEALED MEMS DEVICE AND METHOD OF FABRICATION Public/Granted day:2013-12-12
Information query
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