Invention Grant
US08691639B2 Manufacture methods of thin film transistor and array substrate and mask
有权
薄膜晶体管和阵列基板和掩模的制造方法
- Patent Title: Manufacture methods of thin film transistor and array substrate and mask
- Patent Title (中): 薄膜晶体管和阵列基板和掩模的制造方法
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Application No.: US13484835Application Date: 2012-05-31
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Publication No.: US08691639B2Publication Date: 2014-04-08
- Inventor: Weifeng Zhou , Jianshe Xue
- Applicant: Weifeng Zhou , Jianshe Xue
- Applicant Address: CN Beijing
- Assignee: Boe Technology Group Co., Ltd.
- Current Assignee: Boe Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201110147134 20110601
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Embodiments of the disclosed technology disclose manufacture methods of a thin film transistor and an array substrate and a mask therefor are provided. The manufacture method of the thin film transistor comprises: patterning a wire layer by using a exposure machine and a mask with a first exposure amount larger than a normal exposure amount during formation of source and drain electrodes; forming a semiconductor layer on the patterned wire layer; patterning the semiconductor layer by using the exposure machine and the mask with a second exposure amount smaller than the first exposure amount. The mask comprises a source region for forming the source electrode, a drain region for forming the drain electrode and a slit provided between the source region and the drain region, and the width of the slit is smaller than the resolution of the exposure machine.
Public/Granted literature
- US20120309136A1 MANUFACTURE METHODS OF THIN FILM TRANSISTOR AND ARRAY SUBSTRATE AND MASK Public/Granted day:2012-12-06
Information query
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