Invention Grant
US08691668B2 Dihalide germanium(II) precursors for germanium-containing film depositions
有权
用于含锗膜沉积的二卤化锗（II）前体
- Patent Title: Dihalide germanium(II) precursors for germanium-containing film depositions
- Patent Title (中): 用于含锗膜沉积的二卤化锗（II）前体
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Application No.: US13393975Application Date: 2010-09-02
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Publication No.: US08691668B2Publication Date: 2014-04-08
- Inventor: Julien Gatineau , Andreas Zauner , Hana Ishii
- Applicant: Julien Gatineau , Andreas Zauner , Hana Ishii
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- International Application: PCT/IB2010/053961 WO 20100902
- International Announcement: WO2011/027321 WO 20110310
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Disclosed are GeX2Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5≦n≦2. These molecules have lower melting points and/or increased volatility compared to GeCl2-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.
Public/Granted literature
- US20120231611A1 DIHALIDE GERMANIUM(II) PRECURSORS FOR GERMANIUM-CONTAINING FILM DEPOSITIONS Public/Granted day:2012-09-13
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