Invention Grant
US08691671B2 Planar nonpolar group-III nitride films grown on miscut substrates
有权
平面非极性III族氮化物薄膜生长在不同的基板上
- Patent Title: Planar nonpolar group-III nitride films grown on miscut substrates
- Patent Title (中): 平面非极性III族氮化物薄膜生长在不同的基板上
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Application No.: US13427590Application Date: 2012-03-22
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Publication No.: US08691671B2Publication Date: 2014-04-08
- Inventor: Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. Denbaars , Shuji Nakamura , James S. Speck
- Applicant: Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. Denbaars , Shuji Nakamura , James S. Speck
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.
Public/Granted literature
- US20120175739A1 PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES Public/Granted day:2012-07-12
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