Invention Grant
US08691676B2 Substrate heat treating apparatus, temperature control method of substrate heat treating apparatus, manufacturing method of semiconductor device, temperature control program of substrate heat treating apparatus, and recording medium 有权
基板热处理装置,基板热处理装置的温度控制方法,半导体装置的制造方法,基板热处理装置的温度控制程序以及记录介质

  • Patent Title: Substrate heat treating apparatus, temperature control method of substrate heat treating apparatus, manufacturing method of semiconductor device, temperature control program of substrate heat treating apparatus, and recording medium
  • Patent Title (中): 基板热处理装置,基板热处理装置的温度控制方法,半导体装置的制造方法,基板热处理装置的温度控制程序以及记录介质
  • Application No.: US13808338
    Application Date: 2011-08-03
  • Publication No.: US08691676B2
    Publication Date: 2014-04-08
  • Inventor: Masami ShibagakiKaori Mashimo
  • Applicant: Masami ShibagakiKaori Mashimo
  • Applicant Address: JP Kawasaki-shi
  • Assignee: Canon Anelva Corporation
  • Current Assignee: Canon Anelva Corporation
  • Current Assignee Address: JP Kawasaki-shi
  • Agency: Fitzpatrick, Cella, Harper & Scinto
  • Priority: JP2010-178458 20100809
  • International Application: PCT/JP2011/004390 WO 20110803
  • International Announcement: WO2012/020556 WO 20120216
  • Main IPC: H01L21/265
  • IPC: H01L21/265 H01L21/425
Substrate heat treating apparatus, temperature control method of substrate heat treating apparatus, manufacturing method of semiconductor device, temperature control program of substrate heat treating apparatus, and recording medium
Abstract:
To provide a temperature control method capable of equivalently maintaining qualities of substrates even when treated substrates are continuously carried in a treatment container in the case in which activation annealing treatment is performed by an electron impact heating method. The temperature control method of a substrate heat treating apparatus performing annealing treatment of a substrate by an electron impact heating method includes performing preheating for heating the inside of a treating chamber 2a at a higher temperature than the annealing treatment temperature of a substrate 21 and over a longer period of time than the annealing treatment time and then, cools the inside of the treatment container to a temperature lower than the annealing treatment temperature, prior to carrying the substrate 21 in a vacuum exhaustible container 3 and carrying the substrate 21 in the preheated vacuum exhaustible treatment container 3 and then, increasing a temperature of the treatment container to the annealing treatment temperature to perform the annealing treatment.
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