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Invention Grant
US08691686B2 Method of manufacturing semiconductor device, semiconductor device, and electronic apparatus 有权
制造半导体器件，半导体器件和电子设备的方法

  • Patent Title: Method of manufacturing semiconductor device, semiconductor device, and electronic apparatus
  • Patent Title (中): 制造半导体器件，半导体器件和电子设备的方法
  • Application No.: US13439020
    Application Date: 2012-04-04
  • Publication No.: US08691686B2
    Publication Date: 2014-04-08
  • Inventor: Ikue Mitsuhashi
  • Applicant: Ikue Mitsuhashi
  • Applicant Address: JP
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP
  • Agency: Sheridan Ross P.C.
  • Priority: JP2011-087053 20110411
  • Main IPC: H01L21/4763
  • IPC: H01L21/4763
Method of manufacturing semiconductor device, semiconductor device, and electronic apparatus
Abstract:
A method of manufacturing a semiconductor device, includes: forming a first circuit substrate having a first interconnection; forming a second circuit substrate having a second interconnection; bonding the first circuit substrate to the top surface of the second circuit substrate so as to be stacked facing each other; and performing an etching process of simultaneously removing parts formed on the first interconnection and the second interconnection in a stacked body of the first circuit substrate and the second circuit substrate so as to form a first opening in the top surface of the first interconnection and to form a second opening in the top surface of the second interconnection. The forming of the first circuit substrate includes forming an etching stopper layer on the surface of the first interconnection out of a material having an etching rate lower than that of the first interconnection in the etching process.
Abstract(Chinese):

一种制造半导体器件的方法，包括：形成具有第一互连的第一电路基板; 形成具有第二互连的第二电路基板; 将所述第一电路基板接合到所述第二电路基板的顶表面，以便彼此相对堆叠; 以及执行在第一电路基板和第二电路基板的层叠体中同时去除形成在第一互连件和第二互连件上的部件的蚀刻工艺，以便在第一互连件的顶表面中形成第一开口并形成 在第二互连的顶表面中的第二开口。 第一电路基板的形成包括在蚀刻工艺中在比第一互连的蚀刻速率低的材料的第一互连表面上形成蚀刻停止层。

Public/Granted literature
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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