Invention Grant
- Patent Title: Method and apparatus for plasma dicing a semi-conductor wafer
- Patent Title (中): 用于等离子体切割半导体晶片的方法和装置
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Application No.: US13829324Application Date: 2013-03-14
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Publication No.: US08691702B2Publication Date: 2014-04-08
- Inventor: Dwarakanath Geerpuram , David Pays-Volard , Linnell Martinez , Chris Johnson , David Johnson , Russell Westerman
- Applicant: Plasma-Therm LLC
- Applicant Address: US FL St. Petersburg
- Assignee: Plasma-Therm LLC
- Current Assignee: Plasma-Therm LLC
- Current Assignee Address: US FL St. Petersburg
- Agency: Burr & Brown LLP
- Agent Harvey S. Kauget
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/00
Abstract:
The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
Public/Granted literature
- US20130230971A1 Method and Apparatus for Plasma Dicing a Semi-conductor Wafer Public/Granted day:2013-09-05
Information query
IPC分类:
