Invention Grant
- Patent Title: Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same
- Patent Title (中): 热电半导体材料,使用热电半导体材料的热电半导体元件,使用热电半导体元件的热电模块及其制造方法
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Application No.: US13083666Application Date: 2011-04-11
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Publication No.: US08692103B2Publication Date: 2014-04-08
- Inventor: Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
- Applicant: Toshinori Ota , Hiroki Yoshizawa , Kouiti Fujita , Isao Imai , Tsuyoshi Tosho , Ujihiro Nishiike
- Applicant Address: JP
- Assignee: IHI Corporation
- Current Assignee: IHI Corporation
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2003-130618 20030508
- Main IPC: H01L35/34
- IPC: H01L35/34

Abstract:
A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 μm. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10. As a result, a thermoelectric semiconductor 17 having crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.
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