Invention Grant
- Patent Title: III-V nitride-based thermoelectric device
- Patent Title (中): III-V族氮化物基热电器件
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Application No.: US13089138Application Date: 2011-04-18
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Publication No.: US08692105B2Publication Date: 2014-04-08
- Inventor: Hiroaki Ohta , Alexander Sztein , Steven P. DenBaars , Shuji Nakamura
- Applicant: Hiroaki Ohta , Alexander Sztein , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L35/12
- IPC: H01L35/12 ; H01L35/30
Abstract:
A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.
Public/Granted literature
- US20110253187A1 III-V NITRIDE-BASED THERMOELECTRIC DEVICE Public/Granted day:2011-10-20
Information query
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