Invention Grant
- Patent Title: Method and apparatus for growing a III-nitride layer
- Patent Title (中): 用于生长III族氮化物层的方法和装置
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Application No.: US13788318Application Date: 2013-03-07
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Publication No.: US08692219B2Publication Date: 2014-04-08
- Inventor: Michael A. Briere
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: G21K5/00
- IPC: G21K5/00
Abstract:
A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method.
Public/Granted literature
- US20130196490A1 Method and Apparatus for Growing a III-Nitride Layer Public/Granted day:2013-08-01
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