Invention Grant
- Patent Title: Leakage measurement structure having through silicon vias
- Patent Title (中): 泄漏测量结构通过硅通孔
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Application No.: US13233085Application Date: 2011-09-15
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Publication No.: US08692246B2Publication Date: 2014-04-08
- Inventor: Bhavana Bhoovaraghan , Mukta G. Farooq , Emily R. Kinser , Sudesh Saroop
- Applicant: Bhavana Bhoovaraghan , Mukta G. Farooq , Emily R. Kinser , Sudesh Saroop
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Katherine S. Brown; Ian D. MacKinnon
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/10 ; G01R31/26 ; H01L21/66

Abstract:
A leakage measurement structure for through substrate vias which includes a semiconductor substrate; a plurality of through substrate vias in the semiconductor substrate extending substantially through the semiconductor substrate; and a leakage measurement structure located in the semiconductor substrate. The leakage measurement structure includes a plurality of substrate contacts extending into the semiconductor substrate; a plurality of sensing circuits connected to the plurality of through substrate vias and to the plurality of the substrate contacts, the plurality of sensing circuits providing a plurality of outputs indicative of current leakage from the plurality of through substrate vias; a built-in self test (BIST) engine to step through testing of the plurality of through substrate vias; and a memory coupled to the BIST engine to receive the outputs from the plurality of sensing circuits. Also included is a method of testing a semiconductor substrate.
Public/Granted literature
- US20130069062A1 LEAKAGE MEASUREMENT OF THROUGH SILICON VIAS Public/Granted day:2013-03-21
Information query
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